PART |
Description |
Maker |
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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IDT71V547S90PFI |
128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs 128K X 36 ZBT SRAM, 9 ns, PQFP100
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Integrated Device Technology, Inc.
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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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AS7C33128NTD32_36B AS7C33128NTD36B-200TQIN AS7C331 |
3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 32 ZBT SRAM, 3.5 ns, PQFP100 3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 36 ZBT SRAM, 3.5 ns, PQFP100 3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 32 ZBT SRAM, 3 ns, PQFP100 3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 36 ZBT SRAM, 4 ns, PQFP100 3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 32 ZBT SRAM, 4 ns, PQFP100 NTD? Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出,静态RAM) 128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出,静态RAM) 128K的18.3V的I / O的ZBT SRAM的(处理器,3.3V的输输出,静态内存)
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Micron Technology, Inc.
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MCM63Z818TQ133R MCM63Z818TQ100 MCM63Z736TQ133R |
128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM 256K X 18 ZBT SRAM, 4.2 ns, PQFP100 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM 256K X 18 ZBT SRAM, 5 ns, PQFP100
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Motorola Mobility Holdings, Inc. MOTOROLA INC
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AS7C33128NTF18B AS7C33128NTF18B-80TQIN AS7C33128NT |
LM3914 Dot/Bar Display Driver; Package: PLCC; No of Pins: 20; Qty per Container: 40; Container: Rail LM3914 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail 128K X 18 ZBT SRAM, 7.5 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD 128K X 18 ZBT SRAM, 7.5 ns, PQFP100 128K X 18 ZBT SRAM, 7.5 ns, PQFP100 14 X 20 MM, TQFP-100 LM3881 Power Sequencer; Package: MINI SOIC; No of Pins: 8; Qty per Container: 1000; Container: Reel LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute; Package: TO-220; No of Pins: 11; Qty per Container: 20; Container: Rail LM3881 Power Sequencer; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail NTD? Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc. ALSC[Alliance Semiconductor Corporation]
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GS8320ZV36T-200 GS8320ZV36T-133 GS8320ZV36T-133I G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 6.5 ns, PQFP100 1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
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GSI Technology, Inc. http://
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IS61NVP102436-166TQI IS61NVP102436-166TQLI NVP2048 |
1M X 36 ZBT SRAM, 3.5 ns, PQFP100 TQFP-100 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 LEAD FREE, TQFP-100 2M X 18 ZBT SRAM, 3.5 ns, PBGA165
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Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM 256K X 36 ZBT SRAM, 3.5 ns, PQFP100 512K X 18 ZBT SRAM, 3.5 ns, PQFP100
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Samsung semiconductor
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GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM 12ns 128K x 8 1Mb asynchronous SRAM 10ns 128K x 8 1Mb asynchronous SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32 128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 15 ns, PDSO32
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GSI[GSI Technology] GSI Technology, Inc.
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